magnetoresistance in semiconductor

Oct 25, 2020 02:53 am

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0000001565 00000 n Without a magnetic field, the battery drives a radial current between the rims.

In addition, recently, Satoshi Kokado et al. 0000017321 00000 n 0000003124 00000 n A ρ {\displaystyle H} The change of electrical resistance produced in a current-carrying conductor or semiconductor on application of a magnetic field H. Magnetoresistance is one of the galvanomagnetic effects. >> /ID [<75610b04d896d10db944c252ea3bbf75><75610b04d896d10db944c252ea3bbf75>] [8], In polycrystalline ferromagnetic materials, the AMR can only depend on the angle and

∘ It can be for example due to a larger probability of s-d scattering of electrons in the direction of magnetization (which is controlled by the applied magnetic field). θ Under the in uence of a magnetic eld, the electrons in a solid material do not follow the exact direction of superimposed electric eld, instead take a curved path. %%EOF Associated with longitudinal resistivity, there is also transversal resistivity dubbed (somewhat confusingly[1]) the planar Hall effect. The AMR effect is used in a wide array of sensors for measurement of Earth's magnetic field (electronic compass), for electric current measuring (by measuring the magnetic field created around the conductor), for traffic detection and for linear position and angle sensing.

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0000033594 00000 n = − The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. 2 startxref ), an exchange field, and a resistivity for spin {\displaystyle \zeta } 0000000017 00000 n ρ 0000025887 00000 n 0000003420 00000 n xref 0000017315 00000 n 279 0 obj <> endobj >> α

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The dependence of resistance now has a permanent offset which is linear around the null point. H ρ ) +

{\displaystyle \varphi =0} The resulting effects of this spin-polarized transport are small in most bulk materials, usually of the order of 10−4 and less. %���� − 0000078450 00000 n The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. {\displaystyle \alpha =\rho _{\downarrow }/\rho _{\uparrow }} The highest AMR values of up to 2% are found in Permalloy films (Daughton, 1999). / << Because of its appearance, this sensor type is called 'barber pole'. A ρ When a magnetic field perpendicular to the plane of the annulus is applied, (either into or out of the page) a circular component of current flows as well, due to Lorentz force.

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0000002551 00000 n {\displaystyle \psi ,\theta } H 0000003575 00000 n 0000007124 00000 n >> with α 0000000929 00000 n

⊥ 0000006382 00000 n 0000027335 00000 n << 0000026968 00000 n Thomson's experiments[4] are an example of AMR,[7] a property of a material in which a dependence of electrical resistance on the angle between the direction of electric current and direction of magnetization is observed. 3 ⊥ It is observed with H both parallel to and transverse to the current flow. %%EOF 0000007066 00000 n and The magnetoresistance is de ned as the ratio of change in resistance of a substance due to application of magnetic eld to its resistance in zero eld. = 0000010695 00000 n

= 0000016185 00000 n 0000022070 00000 n ∥ The general expression can also be applied to half-metals. = /OpenAction 136 0 R

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The tendency of some materials to change the value of their electrical resistance when placed in an external magnetic field, "Anisotropic magnetoresistance in ferromagnetic 3d alloys", 10.4028/www.scientific.net/AMR.750-752.978, "Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices", https://en.wikipedia.org/w/index.php?title=Magnetoresistance&oldid=983452978, Short description is different from Wikidata, Creative Commons Attribution-ShareAlike License, This page was last edited on 14 October 2020, at 09:18. /Filter /FlateDecode ρ [11][12] have obtained the general expression of the AMR ratio for 3d transition-metal ferromagnets by extending the CFJ theory to a more general one. 4

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0000016830 00000 n In monocrystals, resistivity 1 Very Large Tunneling Magnetoresistance in Layered Magnetic Semiconductor CrI 3 Zhe Wang1,2*, Ignacio Gutiérrez-Lezama1,2, Nicolas Ubrig1,2, Martin Kroner3, Marco Gibertini1,2, Takashi Taniguchi4, Kenji Watanabe4, Ataç Imamoğlu3, Enrico Giannini1 and Alberto F. Morpurgo1,2* 1Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, CH- ( An example of magnetoresistance due to direct action of magnetic field on electric current can be studied on a Corbino disc (see Figure). ρ The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. φ

>> ( ζ startxref 0000020479 00000 n {\displaystyle A} Based on ab initio calculations, we associate the origin of the phenomenon with large anisotropies in the relativistic electronic structure. 0000025601 00000 n , , respectively. /O 139 This structure forces the current not to flow along the “easy axes” of thin film, but at an angle of 45°.

%PDF-1.5 0 A. Campbell, A. Fert, and O. Jaoul (CFJ) [10] derived an expression of the AMR ratio for Ni-based alloys using the two-current model with s-s and s-d scattering processes, where s is a conduction electron and d is 3d states with the spin-orbit interaction. 0000002684 00000 n endobj xref ⊥ − 0000025949 00000 n 2 = ρ <<1BD9405AEB999346A97F06D017AF6F96>]>> 0000005067 00000 n 0000039306 00000 n {\displaystyle \rho _{\sigma }}

0000025260 00000 n ρ ∥ 0000013345 00000 n

While conventional MR effects are rather small in most semiconductors (about 1–3%), there has been a renaissance of these kind of sensors due to extremely large MR effects (XMR sensors), called anisotropic MR (AMR) (see Magnetoresistance, Anisotropic), giant MR (GMR) and, colossal MR (CMR) (see Giant Magnetoresistance). /L 327435 0000011180 00000 n between the magnetization and current direction 0000005633 00000 n 0000004733 00000 n / 0000026680 00000 n 0000001616 00000 n 0000034567 00000 n

0000002871 00000 n , /Names 109 0 R 0000038707 00000 n Even though the traditional MR effect has been used to measure the field … {\displaystyle \rho } /Info 135 0 R /T 324567 0000024925 00000 n The effect arises from the simultaneous action of magnetization and spin-orbit interaction and its detailed mechanism depends on the material. 0000034197 00000 n << 0000038615 00000 n The biggest AMR sensor manufacturers are Honeywell, NXP Semiconductors, STMicroelectronics, and Sensitec GmbH. 0000033871 00000 n

s−1 at 300 K. So in a 0.25 T field, for example the magnetoresistance increase would be 100%.

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